CATALYTIC CHEMICAL VAPOR DEPOSITION DEVICE, AND DEPOSITION METHOD AND CATALYST BODY SURFACE TREATMENT METHOD USING SAME

摘要

A deposition device for conducting chemical vapor deposition (CVD) on catalyst bodies provides a configuration that reduces problems caused by the growth of a catalyst body, and is excellent in terms of running costs and productivity. The deposition device is provided with: a chamber (1), the inside of which can be maintained in a vacuum state; source gas introduction routes (32, 33a) for introducing a source gas into the chamber; a catalyst body (4) configured in such a manner that the source gas introduced from the gas introduction routes comes into contact with the surface, and a boride layer forms on the surface of a tantalum wire disposed inside the chamber (1); surface-layer-forming gas introduction routes (36, 33b) for introducing diborane gas into the chamber (1) in order to form a boride layer on the surface of the catalyst body (4); and a power supply unit (5) for applying energy to the catalyst body (4) so as to heat the catalyst body to a predetermined temperature. The introduction of the source gas is stopped, and the catalyst body (4) is electrically heated while introducing the diborane gas from the surface-layer-forming gas introduction routes, thereby forming a boride by further accumulating the boride on the surface of the boride layer of the catalyst body (4).