发明名称 SOLID STATE IMAGING APPARATUS
摘要 While a drain power source of a reset transistor and a drain power source of an amplifying transistor are separated, the load of drain power source can be reduced by sharing a drain diffusion layer of the reset transistor and a drain diffusion layer of the amplifying transistor by adjacent cells in sharing pixel units. Further, an efficient pixel layout is provided by reducing the number of routing wires.
申请公布号 US2012224089(A1) 申请公布日期 2012.09.06
申请号 US201213370710 申请日期 2012.02.10
申请人 SATO MAKI;KABUSHIKI KAISHA TOSHIBA 发明人 SATO MAKI
分类号 H04N5/335 主分类号 H04N5/335
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