| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in a reduced size which exhibits improved reverse recovery characteristics in an antiparallel diode of a main element. <P>SOLUTION: A semiconductor device D comprises a semiconductor circuit 22 and a power 9. The semiconductor circuit 22 comprises: a main element 3 including a switching element 1 and an antiparallel diode 2; an inverse voltage applying circuit 7 including a high-speed reflux diode 4, a capacitor 6, and an auxiliary element 5; a main element driving circuit 13; and an auxiliary element driving circuit 14. The power 9 is connected in parallel to the capacitor 6, is connected to the main element driving circuit 13 and the auxiliary element driving circuit 14, supplies power to the capacitor 6, the main element driving circuit 13, and the auxiliary element driving circuit 14, and has a voltage value smaller than the withstand voltage value of the main element 3. <P>COPYRIGHT: (C)2012,JPO&INPIT |
