| 摘要 |
PURPOSE: A magnetic tunnel junction and a manufacturing method thereof are provided to easily change a magnetization direction with a low current by forming a nano dot pattern in a magnetization direction free layer. CONSTITUTION: A magnetization direction pinned layer(3) is formed on a substrate. A tunnel insulation layer(4) is formed in the magnetization direction pinned layer. A plurality of nano dot patterns(5B) are formed on the tunnel insulation layer and include ferromagnetic substances. The diameter of the ferromagnetic substances is 0.3 to 10 nm.
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