| 摘要 |
PURPOSE: A method for forming a pattern of a semiconductor device is provided to control the linewidth of a pattern of an etched layer by using one pattern. CONSTITUTION: A photoresist layer(12) is exposed by using a photo mask(13). A photoresist pattern with a photoacid generation region(12B) and a non-exposure region is formed. The photoacid generation region of the photoresist pattern is hardened. The non-exposure region of the photoresist pattern is removed. A layer(11) is etched using the photoacid generation region of the hardened photoresist pattern as an etch barrier.
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