METHOD FOR FORMING SEMICONDUCTOR DEVICE WITH TSV

摘要

PURPOSE: A method for forming a semiconductor device equipped with a penetrating electrode is provided to secure overlay margins between a connection terminal and the penetrating electrode by controlling a short circuit between a silicon substrate and a bump when the bump is connected to the penetrating electrode. CONSTITUTION: A penetrating electrode hole(201) is formed on the front side of a semiconductor substrate(100). The penetrating electrode hole is filled with a first insulation layer. An insulation tube(305) is formed by selectively etching the center portion of the first insulation layer. An inner space of the insulation tube is filled with a penetrating electrode. The bottom of the penetrating electrode is exposed by grinding the rear side of the semiconductor substrate. A connection terminal is formed on the exposed bottom of the penetrating electrode.