发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A SiC MOSFET has a subject that resistance in the source region is increased when annealing for metal silicidation is performed to a source region before forming the gate insulating film, the metal silicide layer of the source region is oxidized by an oxidizing treatment (including oxynitriding treatment) when the gate insulating film is formed. When a metal silicide layer to be formed on the surface of a SiC epitaxial substrate is formed before forming a gate insulating film interface layer (oxide film), and an anti-oxidation film for the metal silicide is formed on the metal silicide layer, it is possible to suppress oxidation of the metal silicide layer by the oxidizing treatment upon forming the gate insulating film interface layer and the resistance of the source region can be decreased without lowering the channel mobility.
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申请公布号 |
US2012217513(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
US201213349430 |
申请日期 |
2012.01.12 |
申请人 |
TEGA NAOKI;SHIMAMOTO YASUHIRO;MORI YUKI;HAMAMURA HIROTAKA;OKINO HIROYUKI;HISAMOTO DIGH;HITACHI, LTD. |
发明人 |
TEGA NAOKI;SHIMAMOTO YASUHIRO;MORI YUKI;HAMAMURA HIROTAKA;OKINO HIROYUKI;HISAMOTO DIGH |
分类号 |
H01L21/28;H01L29/12 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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