发明名称 FILM BULK ACOUSTIC RESONATOR COMPRISING A BRIDGE
摘要 A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer.
申请公布号 US2012218057(A1) 申请公布日期 2012.08.30
申请号 US201113151631 申请日期 2011.06.02
申请人 BURAK DARIUSZ;NIKKEL PHIL;FENG CHRIS;SHIRAKAWA ALEXANDRE;CHOY JOHN;AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD. 发明人 BURAK DARIUSZ;NIKKEL PHIL;FENG CHRIS;SHIRAKAWA ALEXANDRE;CHOY JOHN
分类号 H03H9/54 主分类号 H03H9/54
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