Plasma processing device comprises vacuum system for processing substrates and microwave resonator for inductively producing plasma, exhibiting electrically conductive base with continuous opening, which receives plasma

摘要

Plasma processing device comprises a vacuum system (10) for processing substrates (11) and a microwave resonator (1) for inductively producing plasma (40). The microwave resonator exhibits an electrically conductive base (2) with a continuous opening. The opening receives plasma produced during the operation, and the electrically conductive base exhibits a discontinuity filled with dielectric to form a capacitance. The discontinuity of the continuous opening extends away into conductive base, and the plasma produced during operation is transported to the substrate in the vacuum system. Plasma processing device comprises a vacuum system (10) for processing substrates (11) and a microwave resonator (1) for inductively producing a plasma (40). The microwave resonator exhibits an electrically conductive base (2) with a continuous opening, in which microwave energy of a microwave generator (30) is coupled. The opening receives plasma produced during the operation, and the electrically conductive base exhibits a discontinuity filled with a dielectric to form a capacitance. The discontinuity of the continuous opening extends away into the conductive base, and the plasma produced during the operation is transported to the substrate in the vacuum system. An independent claim is also included for a plasma processing method for processing the substrate surface in the vacuum system, comprising inductively coupling the microwave radiation in the opening with the electrically conductive base having continuous opening in the microwave resonator and transporting the produced plasma to the substrate in the vacuum system.