发明名称 |
Nitride based light emitting device using patterned lattice buffer layer and method of manufacturing the same |
摘要 |
<p>Disclosed is a method of manufacturing a nitride-based light emitting device, in which a patterned lattice buffer layer is formed to minimize dislocation density upon growth of a nitride layer and an air gap is formed to enhance brightness of the light emitting device. The method includes depositing a material having a Wurtzite lattice structure on a substrate to form a deposition layer, forming an etching pattern on a surface of the deposition layer to form a patterned lattice buffer layer, and growing a nitride layer on the patterned lattice buffer layer. During the growth of the nitride layer, the patterned lattice buffer layer is removed to form an air gap at a portion of the nitride layer from which the patterned lattice buffer layer is removed. A nitride-based light emitting device manufactured thereby is also disclosed.</p> |
申请公布号 |
EP2492953(A2) |
申请公布日期 |
2012.08.29 |
申请号 |
EP20110167419 |
申请日期 |
2011.05.25 |
申请人 |
SEMIMATERIALS CO., LTD.;PARK, KUN |
发明人 |
PARK, KUN;JIN, JOO |
分类号 |
H01L21/20;H01L33/00;H01L33/16;H01L33/28 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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