HIGH SPEED DEPOSITION METHOD OF AMORPHOUS AND CRYSTALLINE SIGE THIN FILM BY REACTIVE ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION

摘要

PURPOSE: A high speed deposition method of amorphous and crystalline SIGE(Silicon Germanium) thin films by reactive atmospheric pressure chemical vapor deposition are provided to grow high quality of a silicon thin film by growing a silicon thin film by generating plasma of high frequency under atmospheric deposition pressure. CONSTITUTION: A substrate(20) is installed within a chamber(10) of an atmospheric pressure plasma chemical vapor deposition apparatus(1). Source gas puts into the substrate. The source gas uses SiH4 or Si2H6. The chamber is maintained by atmospheric pressure. Plasma is generated within the chamber. Amorphous and crystalline silicon germanium thin films(30) are deposited on the substrate.