Bandgap reference circuit for providing voltage or current to e.g. power amplifiers, has supply circuit and/or biasing circuit provided with control elements and/or biasing elements comprising transistor with high electron mobility

摘要

The circuit (E1) has a voltage generator (VG) for producing voltage or current proportional to absolute temperature. A supply circuit (SC) produces supply voltage for operating the voltage generator. A control element (CS) of the supply circuit and/or a control element (CB) of a biasing circuit (BC) comprises a pseudomorphic transistor with high electron mobility, and/or a biasing element (BS) of the supply circuit and/or a biasing element (BB) of the biasing circuit comprises a pseudomorphic transistor with high electron mobility and a long gate electrode. The pseudomorphic transistor of the control elements is designed as a depletion transistor, an enhancement transistor and a heterojunction bipolar transistor. An independent claim is also included for a method for manufacturing a bandgap reference circuit.