发明名称 Method of plasma etching and plasma chamber cleaning using F2 and COF2
摘要 For the plasma assisted manufacture of semiconductors, photovoltaic cells, thin film transistor liquid crystal displays and micro-electromechanical systems, and for chamber cleaning, F2 or COF2 is applied as etchant. It was found that a plasma emitter providing microwaves with a frequency of equal to or greater than 15 MHz provides plasma very effectively.
申请公布号 US2012214312(A1) 申请公布日期 2012.08.23
申请号 US201013504099 申请日期 2010.10.28
申请人 RIVA MARCELLO;SOLVAY SA 发明人 RIVA MARCELLO
分类号 H01L21/3065;B08B9/08;C01B7/20;C01B31/00 主分类号 H01L21/3065
代理机构 代理人
主权项
地址