发明名称 |
SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF, AND TRANSISTOR |
摘要 |
<p>One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.</p> |
申请公布号 |
KR20120094013(A) |
申请公布日期 |
2012.08.23 |
申请号 |
KR20127014740 |
申请日期 |
2010.10.21 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TAKAYAMA TORU;SATO KEIJI |
分类号 |
C23C14/34;C04B35/01;C04B35/64;H01L29/786 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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