| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a response speed of a light detection element in which both electrodes of an anode electrode and a cathode electrode are provided on the same plane. <P>SOLUTION: The light detection element is provided with an insulating layer 4 provided on a semiconductor substrate 2, a semiconductor mesa part 5 provided on the insulating layer 4, and the anode electrode and cathode electrode provided on the main face of the semiconductor mesa part 5. The semiconductor mesa part 5 has an n<SP>+</SP>-type buried layer 6 provided on a junction face in-between the insulating layer 4, an n<SP>-</SP>-type layer 8 provided on the n<SP>+</SP>-type buried layer 6, a light detection region S1 provided in the n<SP>-</SP>-type layer 8 while including a p<SP>+</SP>-type region 16, an n<SP>+</SP>-type region 14 provided on the main face so as to surround the light detection region S1 in the n<SP>-</SP>-type layer 8, and an n<SP>+</SP>-type connection region 10 provided on each side face of the semiconductor mesa part 5 so as to surround the light detection region S1 in the n<SP>-</SP>-type layer 8. The semiconductor substrate 2 has a light incidence hole H1, which penetrates through the semiconductor substrate 2 and reaches the insulating layer 4, at a position corresponding to the light detection region S1. <P>COPYRIGHT: (C)2007,JPO&INPIT |
