| 摘要 |
FIELD: physics. ^ SUBSTANCE: method of forming a magnetic tunnel junction (MTJ) device involves forming a trench in a substrate; depositing a MTJ structure inside the trench, wherein the MTJ structure includes a bottom electrode, a fixed layer, a tunnel barrier layer, a free layer and a top electrode; and applying a reverse photoetching process to remove material which does not directly protrude from the trench; planarising the MTJ structure without performing a photoetching process on the MTJ structure. Two more versions of the present method are also disclosed. ^ EFFECT: simple manufacturing process, preventing erosion of the substrate, rounding of corners and undesirable washing-off of the film. ^ 19 cl, 25 dwg |
