| 摘要 |
<p>PURPOSE:To shorten time required for the input/output of a floating gate by performing the control of the input/output of the floating gate of an electrical charge by generating a magnetic field in a nonvolatile memory. CONSTITUTION:The magnetic field is generated in the nonvolatile memory 6 by an electromagnet 7. Namely, when write is performed in a state where the nonvolatile memory 6 exists in the magnetic field generated by the electromagnet 7, and the nonvolatile memory 6 is inclined appropriately against the the line of magnetic force directing from an upside to a down side, a hot electron receives a Lorentz's force by the magnetic field, then, it is remarkably bent off to the upper side. As a result, injection efficiency to the floating gate 4 of the hot electron can be heightened. In such a way, it is possible to inject the quantity of hot electron required for the write to the floating gate 4.</p> |
