| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the carrier concentration is lowered at a carrier concentration peak position of a collector layer, and is less susceptible to the impact of pollution due to the atmosphere of manufacturing environment, and to provide a manufacturing method therefor. <P>SOLUTION: The semiconductor device comprises a semiconductor substrate having a collector layer where the carrier concentration has a peak value at a position separated from the surface by 1 μm or more, and a collector electrode formed to come into contact with the surface of the collector layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
