发明名称 |
SELF ALIGNED IMPACT-IONIZATION MOS (I-MOS) DEVICE AND METHODS OF MANUFACTURE |
摘要 |
A method of forming a semiconductor structure, including forming a gate structure on a substrate; performing a first angled implantation on a first side of the gate structure to form a first doped region in the substrate, the first doped region partially extends within a channel of the gate structure and the gate structure blocks the first angled implantation from affecting the substrate on a second side of the gate structure; forming sidewall spacers on sidewalls of the gate; and forming a second doped region in the substrate on the second side of the gate, spaced apart from the channel.
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申请公布号 |
US2012208338(A1) |
申请公布日期 |
2012.08.16 |
申请号 |
US201213426966 |
申请日期 |
2012.03.22 |
申请人 |
BOOTH, JR. ROGER A.;CHANG PAUL;CHENG KANGGUO;PEI CHENGWEN;TONTI WILLIAM R.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOOTH, JR. ROGER A.;CHANG PAUL;CHENG KANGGUO;PEI CHENGWEN;TONTI WILLIAM R. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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