发明名称 |
SEMICONDUCTOR DEVICE INCLUDING MULTIPLE METAL SEMICONDUCTOR ALLOY REGION AND A GATE STRUCTURE COVERED BY A CONTINUOUS ENCAPSULATING LAYER |
摘要 |
A method of forming a semiconductor device is provided that in some embodiments encapsulates a gate silicide in a continuous encapsulating material. By encapsulating the gate silicide in the encapsulating material, the present disclosure substantially eliminates shorting between the gate structure and the interconnects to the source and drain regions of the semiconductor device.
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申请公布号 |
US2012205727(A1) |
申请公布日期 |
2012.08.16 |
申请号 |
US201113025470 |
申请日期 |
2011.02.11 |
申请人 |
KANAKASABAPATHY SIVANANDA K.;JAGANNATHAN HEMANTH;SEO SOON-CHEON;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KANAKASABAPATHY SIVANANDA K.;JAGANNATHAN HEMANTH;SEO SOON-CHEON |
分类号 |
H01L29/78;H01L21/28;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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