| 摘要 |
Wiring between semiconductor modules and a direct current power supply circuit, which construct a three-level power conversion apparatus, is made to be low inductance, so that reduction in size and cost can be attained easily. In cases where a connection is made between direct current power supplies (electrolytic capacitors) 25, 26 and IGBT modules 16 through 18 of a three-level inverter, a wiring conductor for a bi-directional switch part is divided into three conductors 35, 42, 43 or two conductors 35, 42 on a same surface, and these conductors are sandwiched by a P conductor 33 and an N conductor 37, which are arranged at outer sides thereof, respectively, through insulating materials, so that a three-layer wiring structure of a sealed structure is formed. As a result of this, wiring inductance can be made small even with a small number of laminated layers, so that the reduction in size and cost of the apparatus as a whole is achieved.
|
