| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a metal film processing method with which it is possible to perform etching processing on a metal film, whose etching was impossible with a conventional cluster beam method, by using a cluster beam generated from an oxidation gas, a complexation gas, and a rare gas. <P>SOLUTION: A metal film processing method of processing a metal film 72 formed on a surface of a workpiece W using a gas cluster beam comprises: forming the gas cluster beam by adiabatically expanding a gas mixture of an oxidation gas for forming an oxide through oxidation of a chemical element of the metal film, a complexation gas for forming an organometallic complex through reaction with the oxide, and a rare gas; and performing etching processing on the metal film by causing collision of the gas cluster beam with the metal film of the workpiece. <P>COPYRIGHT: (C)2012,JPO&INPIT |
