| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide novel metal complexes which can be used as precursors to deposit metal or metal oxide films in semiconductor industries. <P>SOLUTION: There are disclosed families of trivalent metal complexes including scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, gallium, indium, manganese, antimony, bismuth; and of divalent metal complexes including magnesium, calcium, strontium, barium, manganese, cobalt, iron, nickel, ruthenium, copper, zinc, cadium. <P>COPYRIGHT: (C)2012,JPO&INPIT |
