发明名称 METHOD FOR ANALYZING ELEMENT CONCENTRATION IN DEPTH DIRECTION
摘要 <P>PROBLEM TO BE SOLVED: To solve the problems that quantization of nitrogen concentration in a measurement sample is performed by a standard sample with known concentration from comparison with its signal intensity in concentration distribution measurement in the depth direction of nitrogen in a silicone oxide film on a silicone base material by secondary ion mass spectrometry, since a detection signal of a molecular ion concerning a nitrogen ion changes according to a degree of vacuum in a sample chamber and a contamination state on the outermost surface of the sample in sample measurement, whenever the measurement sample changes, it is necessary to measure the standard sample at the state every time to perform the quantization by comparison with the measured standard sample, and it takes time and effort very much. <P>SOLUTION: An analytical curve which does not depend on a degree of vacuum and contamination is preliminarily derived from relation between irradiation time showing a signal intensity minimum value and peak concentration of a measurement sample, and then, the peak concentration of the measurement sample is quantized, for example, in primary ion irradiation time dependency of detection signal intensity of SiO<SP POS="POST">+</SP>in secondary ion mass spectrometry. Thus, it becomes possible to obtain quantized concentration distribution in the depth direction equivalent to the conventional method in short time. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012154750(A) 申请公布日期 2012.08.16
申请号 JP20110013437 申请日期 2011.01.25
申请人 FUJITSU LTD 发明人 SHIGENO MAYUMI;KATAOKA YUJI
分类号 G01N23/225 主分类号 G01N23/225
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