发明名称 |
LED MESA SIDEWALL ISOLATION BY ION IMPLANTATION |
摘要 |
<p>A method of LED manufacturing is disclosed. A coating (106) is applied to a mesa. This coating may have different thicknesses on the sidewalls of the mesa compared to the top of the mesa. Ion implantation (109) into the mesa will form implanted regions (110) in the sidewalls in one embodiment. These implanted regions may be used for LED isolation or passivation.</p> |
申请公布号 |
WO2012109110(A1) |
申请公布日期 |
2012.08.16 |
申请号 |
WO2012US23805 |
申请日期 |
2012.02.03 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;YU, SAN;GUPTA, ATUL |
发明人 |
YU, SAN;GUPTA, ATUL |
分类号 |
H01L21/265;H01L33/00;H01L33/44 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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