发明名称 LED MESA SIDEWALL ISOLATION BY ION IMPLANTATION
摘要 <p>A method of LED manufacturing is disclosed. A coating (106) is applied to a mesa. This coating may have different thicknesses on the sidewalls of the mesa compared to the top of the mesa. Ion implantation (109) into the mesa will form implanted regions (110) in the sidewalls in one embodiment. These implanted regions may be used for LED isolation or passivation.</p>
申请公布号 WO2012109110(A1) 申请公布日期 2012.08.16
申请号 WO2012US23805 申请日期 2012.02.03
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;YU, SAN;GUPTA, ATUL 发明人 YU, SAN;GUPTA, ATUL
分类号 H01L21/265;H01L33/00;H01L33/44 主分类号 H01L21/265
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