| 摘要 |
<p>In order to provide a method of manufacturing a semiconductor device that can be in contact with both of an n-type SiC region and a p-type SiC region and can suppress increase in contact resistance due to oxidation, a method of manufacturing a semiconductor device in accordance with the present invention is a method of manufacturing a semiconductor device (1) including the steps of preparing a SiC layer (12) composed of silicon carbide, and forming an ohmic electrode (16) on a main surface of the SiC layer (12). The step of forming the ohmic electrode (16) includes the steps of forming a conductor layer (51, 52, 53) which will become the ohmic electrode (16) on the main surface of the SiC layer (12), and performing heat treatment such that the conductor layer (51, 52, 53) becomes the ohmic electrode (16). After the step of performing the heat treatment, a temperature of the ohmic electrode (16) when a surface of the ohmic electrode (16) is exposed to an atmosphere containing oxygen is set to 100°C or lower.</p> |
