发明名称 Non-volatile memory devices and systems including multi-level cells using modified read voltages and methods of operating the same
摘要 Methods of operating a multi-level non-volatile memory device can include accessing data, stored in the device, which is associated with read voltages and modifying the read voltages applied to a plurality of multi-level non-volatile memory cells to discriminate between states stored by the cells in response to a read operation to the multi-level non-volatile memory device. Related devices and systems are also disclosed.
申请公布号 US8243514(B2) 申请公布日期 2012.08.14
申请号 US201113081747 申请日期 2011.04.07
申请人 KANG DONG GU;LEE SEUNGJAE;CHAE DONGHYUK;SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG DONG GU;LEE SEUNGJAE;CHAE DONGHYUK
分类号 G11C11/34 主分类号 G11C11/34
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