发明名称 |
Non-volatile memory devices and systems including multi-level cells using modified read voltages and methods of operating the same |
摘要 |
Methods of operating a multi-level non-volatile memory device can include accessing data, stored in the device, which is associated with read voltages and modifying the read voltages applied to a plurality of multi-level non-volatile memory cells to discriminate between states stored by the cells in response to a read operation to the multi-level non-volatile memory device. Related devices and systems are also disclosed. |
申请公布号 |
US8243514(B2) |
申请公布日期 |
2012.08.14 |
申请号 |
US201113081747 |
申请日期 |
2011.04.07 |
申请人 |
KANG DONG GU;LEE SEUNGJAE;CHAE DONGHYUK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG DONG GU;LEE SEUNGJAE;CHAE DONGHYUK |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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