Memory device no common source region and method of fabricating the same

摘要

A memory array including a plurality of memory cells, a plurality of word lines, a dummy word line, at least a first conductive region and at least a first plug is provided. Each word line is coupled to corresponding memory cells. A dummy word line is directly adjacent to an outmost word line of the plurality of word lines. The first conductive region is disposed only between the dummy word line and the outmost word line. The first plug is located between the dummy word line and the outmost word line.