| 摘要 |
A phase change memory device having multiple metal silicide layers which enhances the current driving capability of switching elements and a method of manufacturing the same are presented. The device also includes switching elements, heaters, stack patterns, top electrodes, bit lines, word line contacts and word lines. The bottom of the switching elements are in electrical contact with the lower metal silicide layer and with an active area of silicon substrate. An upper metal silicide layer is interfaced between the top of the switching elements and the heaters. The stack patterns include phase change layers and top electrodes and are between the heaters and the top electrodes are in electrical contact with the top electrodes. The bit lines contact with the top electrode contacts. The word line contacts to the lower metal silicide film.
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