发明名称 |
Manufacturing method of semiconductor device |
摘要 |
It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.
|
申请公布号 |
US8236627(B2) |
申请公布日期 |
2012.08.07 |
申请号 |
US20100871122 |
申请日期 |
2010.08.30 |
申请人 |
TSUBUKU MASASHI;YOSHITOMI SHUHEI;TUJI TAKAHIRO;HOSOBA MIYUKI;SAKATA JUNICHIRO;TOMATSU HIROYUKI;HAYAKAWA MASAHIKO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TSUBUKU MASASHI;YOSHITOMI SHUHEI;TUJI TAKAHIRO;HOSOBA MIYUKI;SAKATA JUNICHIRO;TOMATSU HIROYUKI;HAYAKAWA MASAHIKO |
分类号 |
H01L21/00;H01L21/335;H01L21/84 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|