| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce deterioration of photoelectric conversion characteristics and the like due to a damage caused by etching a photoelectric conversion portion and metal contamination. <P>SOLUTION: The photoelectric conversion device has: a photoelectric conversion region 101 in which a plurality of photoelectric conversion elements and a first MOS transistor for reading out a signal based on charges of the photoelectric conversion elements are arranged; and a peripheral circuit region 102 in which a second MOS transistor for driving the first MOS transistor is arranged. The both regions are arranged on the same semiconductor substrate, and an antireflection film 106 is arranged on a light receiving surface of the photoelectric conversion elements. The impurity concentration of a drain 114 of the first MOS transistor is lower than that of a drain 111 of the second MOS transistor, and the second MOS transistor has such an LDD structure that a side spacer 113 of an insulating film is arranged on a gate electrode 112. The film thickness of the side spacer is thicker than that of a silicon oxide film arranged between the antireflection film and the light receiving surface of the photoelectric conversion elements. <P>COPYRIGHT: (C)2012,JPO&INPIT |
