发明名称 |
INSULATING FILM AND SEMICONDUCTOR DEVICE INCLUDING THE SAME |
摘要 |
It is made possible to provide an insulating film that can reduce the leakage current. An insulating film includes: an amorphous oxide dielectric film containing a metal, hydrogen, and nitrogen. The nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship: {[N]—[H]}/2≦̸1.0×1021 cm−3. |
申请公布号 |
US2012196431(A1) |
申请公布日期 |
2012.08.02 |
申请号 |
US201213445328 |
申请日期 |
2012.04.12 |
申请人 |
SHIMIZU TATSUO;KOYAMA MASATO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIMIZU TATSUO;KOYAMA MASATO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|