| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a porous organosilica glass film that has a low dielectric constant, improved mechanical properties, thermal stability, and chemical resistance. <P>SOLUTION: The porous organosilica glass film is produced which is represented by the formula: Si<SB POS="POST">v</SB>O<SB POS="POST">w</SB>C<SB POS="POST">x</SB>H<SB POS="POST">y</SB>F<SB POS="POST">z</SB>(wherein v+w+x+y+z=100%; v is from 10 to 35 atomic%; w is from 10 to 65 atomic%; x is from 5 to 30 atomic%; y is from 10 to 50 atomic%; and z is from 0 to 15 atomic%). Gaseous reagents including a precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen are introduced into the vacuum chamber; energy is applied to the gaseous reagents to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate; and substantially all of the porogen are removed from the preliminary film to provide the porous film with pores and a dielectric constant less than 2.6. <P>COPYRIGHT: (C)2012,JPO&INPIT |
