| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent dependence of a DC voltage output component of an infrared sensor on ambient temperature in a semiconductor integrated circuit which includes the infrared sensor including a device whose characteristics are changed by heat generated due to reception or emission of infrared light. <P>SOLUTION: A first transistor M65 is disposed between an infrared sensor S61 and a ground potential, and a second transistor M64 connected to a power supply Vdd via a resistor R62 supplies current proportional to that flowing through the first transistor M65. A third transistor M66 is disposed between a dummy sensor S62 and the ground potential, and a fourth transistor M67 connected to the power supply Vdd via a resistor R63 supplies current proportional to that flowing through the third transistor M66. A terminal between the transistor M64 and the resistor R62 is set as an infrared sensor output terminal Vout 61 and a terminal between the transistor M67 and the resistor R63 is set as a dummy sensor output terminal Vout 62. <P>COPYRIGHT: (C)2012,JPO&INPIT |
