发明名称 |
Integrated circuit device with series-connected field effect transistors and integrated voltage equalization and method of forming the device |
摘要 |
Disclosed is an integrated circuit device having series-connected planar or non-planar field effect transistors (FETs) with integrated voltage equalization and a method of forming the device. The series-connected FETs comprise gates positioned along a semiconductor body to define the channel regions for the series-connected FETs. Source/drain regions are located within the semiconductor body on opposing sides of the channel regions such that each portion of the semiconductor body between adjacent gates comprises one source/drain region for one field effect transistor abutting another source/drain region for another field effect transistor. Integrated voltage equalization is achieved through a conformal conductive layer having a desired resistance and positioned over the series-connected FETs such that it is electrically isolated from the gates, but in contact with the source/drain regions within the semiconductor body. |
申请公布号 |
US8232627(B2) |
申请公布日期 |
2012.07.31 |
申请号 |
US20090563195 |
申请日期 |
2009.09.21 |
申请人 |
BRYANT ANDRES;NOWAK EDWARD J.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRYANT ANDRES;NOWAK EDWARD J. |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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