发明名称 |
Dielectric deposition and etch back processes for bottom up gapfill |
摘要 |
Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer. |
申请公布号 |
US8232176(B2) |
申请公布日期 |
2012.07.31 |
申请号 |
US20070765944 |
申请日期 |
2007.06.20 |
申请人 |
LUBOMIRSKY DMITRY;NEMANI SRINIVAS D.;YIEH ELLIE;APPLIED MATERIALS, INC. |
发明人 |
LUBOMIRSKY DMITRY;NEMANI SRINIVAS D.;YIEH ELLIE |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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