发明名称 Plasma processing apparatus and method
摘要 There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.
申请公布号 US8231800(B2) 申请公布日期 2012.07.31
申请号 US20090359691 申请日期 2009.01.26
申请人 MORIYA TSUYOSHI;NAKAYAMA HIROYUKI;TOKYO ELECTRON LIMITED 发明人 MORIYA TSUYOSHI;NAKAYAMA HIROYUKI
分类号 B44C1/22;H05H1/46;C23C16/50;C23F4/00;H01J37/32;H01L21/205;H01L21/3065;H01L21/42;H01L21/68 主分类号 B44C1/22
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