发明名称 RESISTANCE HEATING GROWER OF SAPPHIRE SINGLE CRYSTAL INGOT, MANUFACTURING METHOD OF SAPPHIRE SINGLE CRYSTAL INGOT USING RESISTANCE HEATING, SAPPHIRE SINGLE CRYSTAL INGOT AND SAPPHIRE WAFER
摘要 PURPOSE: A resistance heating grower of sapphire single crystal ingot, manufacturing method of sapphire single crystal ingot using resistance heating, sapphire single crystal ingot, and sapphire wafer are provided to reduce shearing stress by changing configuration of an interface. CONSTITUTION: A crucible(120) containing an alumina liquid is included inside a chamber. A resistance heating heater(130) heating the crucible is included inside the chamber. A crucible support(125) is equipped on the outside of the crucible.
申请公布号 KR20120084046(A) 申请公布日期 2012.07.27
申请号 KR20110005339 申请日期 2011.01.19
申请人 LG SILTRON INCORPORATED 发明人 SONG, DO WON;MUN, YOUNG HEE;LEE, SANG HOON;JEONG, SEONG OH;LEE, CHANG YOUN
分类号 C30B15/18;C30B29/20;H01L21/02 主分类号 C30B15/18
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