| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device having excellent sensitivity. <P>SOLUTION: A solid-state imaging device 1 is a back-illuminated solid-state imaging device including a semiconductor substrate 10, a semiconductor layer 20, and a light-receiving section 30. The semiconductor substrate 10 has specific resistance ρ<SB POS="POST">1</SB>. On a front surface S1 of the semiconductor substrate 10, the semiconductor layer 20 is provided. The semiconductor layer 20 has specific resistance ρ<SB POS="POST">2</SB>. The specific resistance ρ<SB POS="POST">1</SB>and the specific resistance ρ<SB POS="POST">2</SB>satisfy the following relationship: ρ<SB POS="POST">2</SB><ρ<SB POS="POST">1</SB>. In the semiconductor layer 20, the light-receiving section 30 is provided. The solid-state imaging device 1 photoelectrically converts light from an object to be imaged incident into a rear surface S2 of the semiconductor substrate 10 in the semiconductor substrate 10 or in the semiconductor layer 20, and then receives signal charges generated by the photoelectric conversion by the light-receiving section 30 to image the object to be imaged. <P>COPYRIGHT: (C)2012,JPO&INPIT |
