发明名称 |
FABRICATION OF CMOS TRANSISTORS HAVING DIFFERENTIALLY STRESSED SPACERS |
摘要 |
CMOS transistors are formed incorporating a gate electrode having tensely stressed spacers on the gate sidewalls of an n channel field effect transistor and having compressively stressed spacers on the gate sidewalls of a p channel field effect transistor to provide differentially stressed channels in respective transistors to increase carrier mobility in the respective channels.
|
申请公布号 |
US2012187482(A1) |
申请公布日期 |
2012.07.26 |
申请号 |
US201113013801 |
申请日期 |
2011.01.25 |
申请人 |
ADAM LAHIR S.;MEHTA SANJAY C.;HARAN BALASUBRAMANIAN S.;DORIS BRUCE B.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ADAM LAHIR S.;MEHTA SANJAY C.;HARAN BALASUBRAMANIAN S.;DORIS BRUCE B. |
分类号 |
H01L21/8238;H01L29/78 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|