发明名称 METHOD OF FORMING HARD MASK OF METAL OXIDE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of forming a spacer film that solves the problem of SDDP. <P>SOLUTION: The method of present invention forms a hard mask of metal oxide on a template. It includes a step to provide a photoresist or a non-crystallinity carbon on a substrate, and a step for vapor-depositing a hard mask of metal oxide on a template comprising the material represented by a formula Si<SB POS="POST">x</SB>M<SB POS="POST">(1-x)</SB>O<SB POS="POST">y</SB>by atomic layer film-forming, where M represents at least one metal element, x is a number which is less than 1 including zero, and y is a number around 2 or that determined stoichiometrically. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012142574(A) 申请公布日期 2012.07.26
申请号 JP20110284831 申请日期 2011.12.27
申请人 ASM JAPAN KK 发明人 KAWA MASASHI;FUKUDA HIDEAKI;KAIDO SHINTARO
分类号 H01L21/027;G03F7/40;H01L21/3065 主分类号 H01L21/027
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