MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of suppressing a leak current.

SOLUTION: A manufacturing method of MOSFET100 comprises: a step of preparing a silicon carbide substrate 1; a step of forming an active layer 7 on the silicon carbide substrate 1; a step of forming a gate oxide film 91 on the active layer 7; a step of forming a gate electrode 93 on the gate oxide film 91; a step of forming a source contact electrode 92 on the active layer 7; and a step of forming source wiring 95 on the source contact electrode 92. The step of forming the source wiring 95 includes a step of forming a conductor film on the source contact electrode 92 and a step of processing the conductor film by etching the conductor film in a reactive ion etching. The manufacturing method of the MOSFET100 further includes an annealing step of heating the silicon carbide substrate 1 to a temperature of 50°C or higher after the step of processing the conductor film.

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