| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily identify places in backside focused ion beam (FIB) processing. <P>SOLUTION: A semiconductor device comprises: a circuit section 65 formed on a surface of a semiconductor substrate 60 of a first conductivity type spreading in a flat surface in a first direction and a second direction perpendicular to the first direction; a plurality of wells 61 that are formed at the surface side in the semiconductor substrate, constitute the circuit section and serve as an element, and has a second conductivity type different from the first conductivity type; and a plurality of dummy wells 62 that are formed at the surface side in the semiconductor substrate, do not constitute the circuit section and do not serve as an element, and has the second conductivity type. <P>COPYRIGHT: (C)2012,JPO&INPIT |
