| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering apparatus which can perform removal of an impurity layer generated at a target entire surface adequately and efficiently, and to provide a sputtering method thereof. <P>SOLUTION: The sputtering apparatus includes: a rotation mechanism making a magnet mechanism 4 composing a cathode 2 rotate around a rotation axis 81A; a revolution mechanism making the magnet mechanism revolute around a revolution axis 82A; a rotating mechanism making the rotation mechanism and the revolution mechanism rotate around a rotation axis different from the rotation axis and the revolution shaft; a measuring device measuring a film thickness of an impurity layer of a target surface 5; and a driving mechanism making the measuring device move from one end of the target surface to the other end, wherein the rotation mechanism has a rotation speed changing mechanism to change a rotation speed of the rotation axis, and the revolution mechanism has a revolution speed changing mechanism to change a revolution speed of the revolution axis. <P>COPYRIGHT: (C)2012,JPO&INPIT |
