SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To manufacture: a transistor in which a threshold voltage is controlled without using a back gate electrode, a circuit for controlling the threshold voltage and impurity doping; and a semiconductor device having excellent electrical properties, high reliability and less power consumption by use of the transistor.

SOLUTION: A gate electrode is used, having a compositionally-controlled tungsten oxide film. The composition or the like is adjusted by a deposition method of the tungsten oxide film thereby enabling control of a work function. A threshold value of a transistor can be controlled by using the work function controlled tungsten oxide film as a part of the gate electrode. A semiconductor device having excellent electrical properties, high reliability and less power consumption can be manufactured by using the threshold voltage controlled transistor.

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