| 摘要 |
<p>Provided is a method for manufacturing a thin-film transistor device by forming a crystalline silicon film having stable crystallinity using a visible-wavelength laser. The method comprises a step (S11) for forming a plurality of gate electrodes on a substrate, a step for forming a silicon nitride layer on the plurality of gate electrodes, a step (S12) for layering a silicon oxide layer on the silicon nitride layer, a step (S13) for forming an amorphous silicon layer on the silicon oxide layer, a step (S14) for crystalizing the amorphous silicon layer using a predetermined laser beam to produce a crystalline silicon layer, and a step (S18) for forming a source electrode and a drain electrode in regions on the crystalline silicon layer that correspond to the individual gate electrodes. The thickness of the silicon oxide layer, the thickness of the silicon nitride layer, and the thickness of the amorphous silicon layer are set so as to satisfy a predetermined conditional expression.</p> |
