发明名称 COMPOSITIONS AND PROCESSES FOR PHOTORESIST STRIPPING AND RESIDUE REMOVAL IN WAFER LEVEL PACKAGING
摘要 <P>PROBLEM TO BE SOLVED: To overcome limitations and disadvantages by providing compositions and processes for removing polymers, post-etch residues, and post-oxygen-ashing residues, particularly from ICs, WLP circuits on wafer substrates, and PCBs. <P>SOLUTION: Improved compositions and processes for removing photoresists, polymers, post-etch residues, and post-oxygen-ashing residues from interconnect, wafer level packaging, and printed circuit board substrates are disclosed. One process comprises contacting such substrates with mixtures containing: an effective amount of organic ammonium compound(s); about 2-20 mass% of oxammonium compound(s); optionally organic solvent(s); and water. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012142588(A) 申请公布日期 2012.07.26
申请号 JP20120039300 申请日期 2012.02.24
申请人 EKC TECHNOL INC 发明人 LEE WAI MUN
分类号 H01L21/304;C11D3/28;C11D17/08;G03F7/42;H01L21/027 主分类号 H01L21/304
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