| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To surely achieve bonding between a semiconductor substrate and a circuit substrate. <P>SOLUTION: An insulating material is buried between electrodes respectively formed at each front surface of the semiconductor substrate and the circuit substrate forming a pair of substrates. The semiconductor substrate is inclined for the circuit substrate and is temporarily fixed thereto under a first temperature for an insulating material to show its bonding property. A plurality of substrates forming a pair thereof fixed temporarily are evacuated to a vacuum state. A pair of substrates are bonded to maintain the pressure by uniformly applying the pressure to the front surface of a plurality of substrates forming a pair fixed temporarily. Moreover, the bonded insulating materials are hardened under a second temperature for hardening the insulating material and metal bonding occurs between the bonded electrodes under a third temperature wherein the electrodes cause solid-state diffusion with each other or the electrodes are fused with each other. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
