Equipment for manufacturing silicon carbide single crystal

摘要

A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate (13) as a seed crystal in a reactive chamber (11); introducing a raw material gas into the reactive chamber (11); growing a silicon carbide single crystal (21) from the substrate (13); heating the gas at an upstream side from the substrate (13) in a gas flow path; keeping a temperature of the substrate (13) at a predetermined temperature lower than the gas so that the single crystal (21) is grown from the substrate (13); heating a part of the gas, which is a non-reacted raw material gas and does not contribute to crystal growth, after passing through the substrate (13); and absorbing a non-reacted raw material gas component in the non-reacted raw material gas with an absorber (4, 12).