Field-effect device provided with a barrier zone for localised dopant scattering and manufacturing method

摘要

The device has source/drain electrodes (6) arranged on sides of a sacrificial gate electrode and doped by doping impurity. A conduction channel is formed in a semiconductor film of a substrate (3). A modified diffusion area (11) is arranged in an extension of a lateral spacer (8) to connect an electrically insulating layer (5) of the substrate to the lateral spacer. The area includes a diffusion barrier element with the doping impurity, where barrier element concentrations in the channel and in one of the source/drain electrodes are lower than the barrier element concentration in the area. An independent claim is also included for a method for manufacturing a field effect device.